Semiconductor laser device
文献类型：专利
| 作者 | HASEGAWA KAZUYOSHI |
| 发表日期 | 1990-04-19 |
| 专利号 | JP1990106989A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To control each laser beam independently, and to prevent noises due to return beams by receiving each monitor beam by separate PD for monitor and severally driving APCs. CONSTITUTION:An LD chip 1 is die-bonded with the low surface section 12 of a stepped Si sub-mount 11, and currents are made to flow through a P-N junction vertically in the LD chip 1, thus emitting laser beams A5a, B5b from the front end face 8 of the LD chip 1 while emitting monitor beams A6a, B6b from a rear end face 9. Monitor beams A6a, B6b are not made to intervene mutually by a protrusion section 15 separately, and are received to PDs A14a, B14b for monitor shaped to stepped boundary surfaces 13 respectively. Monitor beams are converted into separate electric signals by each PD A14a, B14b for monitor in laser beams A5a, B5b, and an optical output is controlled by each APC circuit. A stepped boundary surface 13 is provided with a proper inclination to prevent return beam noises by reflected beams from the PDs for monitor to the rear end face 9 of the LD chip 1 at the same time. |
| 公开日期 | 1990-04-19 |
| 申请日期 | 1988-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70879]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HASEGAWA KAZUYOSHI. Semiconductor laser device. JP1990106989A. 1990-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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