中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor device

文献类型:专利

作者ITO KIYOSHI
发表日期1990-10-05
专利号JP1990249256A
著作权人NEC CORP
国家日本
文献子类发明申请
其他题名Semiconductor device
英文摘要PURPOSE:To absorb an instantaneous surge voltage generated by a human body, production equipment, etc., and protect a semiconductor chip from application of a high voltage by a method wherein the bottom electrode of the semiconductor chip is mounted on a dielectric heatsink attached to a mounting post and the heatsink is provided electrically in parallel with the semiconductor chip. CONSTITUTION:A package 4 which has a first lead 4c jointed to the bottom of a conductive base 4b, a second lead 4d which is inserted into a through-hole drilled in the base 4b and isolated from and fixed to the base 4b with insulating sealing glass 7 and a mounting post 4a provided on the base 4b, a dielectric heatsink 2 attached to the mounting post 4a, a conductor layer 3a provided on the surface of the heatsink 2 opposite to the mounting post 4a, a semiconductor chip 1 whose bottom electrode is mounted on the conductor layer 2a, a first bonding wire 3a with which the upper electrode of the semiconductor chip 1 is connected to the mounting post 4a and a second bonding wire 3b with which the conductor layer 2a is connected to the second lead 4d are provided.
公开日期1990-10-05
申请日期1988-11-02
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/70881]  
专题半导体激光器专利数据库
作者单位NEC CORP
推荐引用方式
GB/T 7714
ITO KIYOSHI. Semiconductor device. JP1990249256A. 1990-10-05.

入库方式: OAI收割

来源:西安光学精密机械研究所

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