Semiconductor laser device
文献类型:专利
作者 | NAGAI SEIICHI |
发表日期 | 1990-05-11 |
专利号 | JP1990123779A |
著作权人 | MITSUBISHI ELECTRIC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To reduce the dispersion of coupling efficiency with an optical fiber by installing a lens holder having a lens to the upper section of a cap and forming inclined sections to the bottom of the cap and the outer circumferential section of a stem. CONSTITUTION:An inclined section 8 is shaped to the outer circumferential section of a stem 6 and an inclined section 9 to the bottom of a cap 7. A lens holder 4 with a lens 3 is placed to the upper section of the cap 7, the lens holder 4 of the upper section of the cap 7 is moved finely in the X and Y directions while an LD chip 1 is light-emitted, and an optical axis is aligned by a photo-detector mounted faced oppositely to the lens 3. When the optical axis is aligned, the lens holder 4 is fixed to the cap 7 through a solder material 5, etc., the inclined section 9 of the cap 7 is placed onto the inclined section 8 shaped to the outer circumferential section of the stem 6, welding is repeated step by step, and the cap 7 is moved finely in the direction of a Z axis and the optical axis is aligned in the Z direction. Accordingly, the dispersion of coupling efficiency with an optical fiber can be reduced. |
公开日期 | 1990-05-11 |
申请日期 | 1988-11-02 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/70883] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | NAGAI SEIICHI. Semiconductor laser device. JP1990123779A. 1990-05-11. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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