Semiconductor laser device
文献类型：专利
| 作者 | NAGASHIMA KENJI |
| 发表日期 | 1990-05-14 |
| 专利号 | JP1990125688A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To decrease a proportion defective of wavefront aberration by specify ing a thickness of the part of a light-emitting resin covering the light-emitting end face of a laser diode. CONSTITUTION:A lead frame in which a number of substrates 2 and leads 9, 10 as required for several semiconductor laser devices are formed integrally is prepared. A submount 3 to which a laser diode element 5 is bonded to a widened section 2 of each substrate 1 and then wires are bonded to the element. Each device is sealed with a light-transmitting resin 14 and the lead frame is cut off to separate the individual semiconductor laser devices. The light- transmitting resin 14 has a thickness (x) of 0.2 to 1mm on the light-emitting end face 6 of the diode element 5. |
| 公开日期 | 1990-05-14 |
| 申请日期 | 1988-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70884]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | NAGASHIMA KENJI. Semiconductor laser device. JP1990125688A. 1990-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。