Compound semiconductor device
文献类型：专利
| 作者 | TANAKA TOSHIO; ISHII MITSUO |
| 发表日期 | 1990-05-16 |
| 专利号 | JP1990128488A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor device |
| 英文摘要 | PURPOSE:To obtain a compound semiconductor device high in reliability for a long term by a method wherein the compound semiconductor device is mounted on a mount member formed of carbon. CONSTITUTION:An Ag block 5, a submount 7 formed of carbon, and a laser diode(LD) chip 1 are piled up in three steps, which is placed on a mounting heater and heated in an N2 gas atmosphere. A low temperature metallizing substance is used for metallized sheets 3 and 4 of the chip 1 and the submount 7, and the chip 1, the submount T, and the Ag block 5 are fusion-welded together. Then, the Ag block 5 is fixed to a package, and a lead wire 6 is lead-bonded to form an LD element. By this setup, an LD element high in long- term reliability can be obtained. |
| 公开日期 | 1990-05-16 |
| 申请日期 | 1988-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70885]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,ISHII MITSUO. Compound semiconductor device. JP1990128488A. 1990-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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