Semiconductor laser device
文献类型：专利
| 作者 | MATSUMOTO AKIHIRO; HOSOBANE HIROYUKI; MATSUI KANEKI |
| 发表日期 | 1990-07-10 |
| 专利号 | JP1990177583A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent an element of this design from rising in temperature and deteriorating in characteristics even if it operates at a high output power by a method wherein a heat sink is provided to one surface of a semiconductor laser element to whose other surface another heat sink has been provided. CONSTITUTION:A semiconductor laser element A is provided with a heat sink 10 fitted to its surface and another heat sink 21 attached to its other surface. Heat released from the active layer and its vicinity of the semiconductor laser element A is absorbed by both the heat sink 10 attached to a growth layer side and the heat sink 21 fitted to a substrate side. Furthermore, heat generated due to a substrate resistance is absorbed by the heat sink 2 By this setup, the semiconductor laser element A is reduced in temperature rise and improved in output characteristic, and can be made to operate at a high output power. |
| 公开日期 | 1990-07-10 |
| 申请日期 | 1988-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70894]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO AKIHIRO,HOSOBANE HIROYUKI,MATSUI KANEKI. Semiconductor laser device. JP1990177583A. 1990-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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