Semiconductor laser
文献类型：专利
| 作者 | SASAKI YOSHIHIRO |
| 发表日期 | 1990-07-16 |
| 专利号 | JP1990181987A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To lower the electrostatic capacity of the electrode section of a semiconductor laser without sacrificing the workability and bonding strength of wire bonding so as to raise the cut-off frequency by forming at least part of the electrode on a dielectric insulating film to a comb-like or grating-like shape in which the electrode is divided into numerous electrode branches. CONSTITUTION:The electrode 5a of a contact section which is parallel with stripes for supplying an electric current has a width of 70mum and the electrode 5b of a wire bonding section connected with the electrode end of the contact section is composed of a plurality of electrode branches, each of which has e width of 10mum and length of 50mum, arranged in parallel with each other as teeth of a comb, with the comb being composed of nine teeth arranged at regular intervals of 10mum. Since the entire area of the wire bonding section is 8500mu, a plurality of wire bonding can be performed simultaneously without lowering the bonding strength even when gold wires of 30mum in diameter are used as lead wires. |
| 公开日期 | 1990-07-16 |
| 申请日期 | 1989-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70895]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIHIRO. Semiconductor laser. JP1990181987A. 1990-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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