Semiconductor laser device
文献类型：专利
| 作者 | ADACHI AKIHIRO; YAMASHITA JUNICHIRO |
| 发表日期 | 1990-07-16 |
| 专利号 | JP1990181990A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a high reflection coupling efficiency eta with a semiconductor laser device and a narrow emission spectrum width with a structure of a small size by using a silicon crystal having a reflecting surface formed to a spherical surface, with its center at the laser beam emitting point and, at the same time, an incident surface also formed to a spherical surface, with its center at the laser beam emitting point. CONSTITUTION:A rear emitted light beam 2 emitted from the rear emitting end face 3 of a semiconductor laser chip 1 is made incident on the plane of incidence 10 of a silicon crystal 9. Since the plane of incidence 10 is a spherical surface having its center at the emitting point of the rear emitted light 2, the light beam advances straight without refraction and is made incident on the reflecting surface 11 of the crystal 9 after passing through the crystal 9 straight. Since the reflecting surface 11 is formed to a spherical surface having its center at the emitting point of the light beam 2, the reflected light beam is necessarily reflected in the direction in which the light beam enters. Therefore, the light beam 2 emitted from the rear emitting end face 3 of the semiconductor laser chip 1 is reflected by the reflecting surface 11 and necessarily re-coupled with the light emitting position on the end face 3 from which the original light beam is emitted and a high re-coupling efficiency eta is obtained. |
| 公开日期 | 1990-07-16 |
| 申请日期 | 1989-01-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70896]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ADACHI AKIHIRO,YAMASHITA JUNICHIRO. Semiconductor laser device. JP1990181990A. 1990-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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