Semiconductor laser
文献类型：专利
| 作者 | MORI MASATAKA; YAGI TETSUYA |
| 发表日期 | 1990-10-29 |
| 专利号 | JP1990264492A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser at a low cost by a method wherein a p-n-p junction is formed inside an Si sub-mount, and an LD chip is electrically isolated from the sub-mount. CONSTITUTION:A semiconductor layer 6 of In or Ga is provided between an n-type Si sub-mount 3 and a copper block 2 and a semiconductor laser chip 4 respectively, and the layer 6 is made to serve as a solder to die-bond them at a temperature than In or Ga contained in the layer 6 is made to diffuse into the sub-mount 3. By this setup, a p-type diffusion region 7 is formed at both the upper and the lower end of the sub-mount 3 respectively, and in result a p-n-p junction is formed and the chip 4 and the sub-mount 3 are electrically isolated from each other. |
| 公开日期 | 1990-10-29 |
| 申请日期 | 1989-04-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70906]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MORI MASATAKA,YAGI TETSUYA. Semiconductor laser. JP1990264492A. 1990-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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