Semiconductor laser
文献类型：专利
| 作者 | WATANABE HITOSHI; FUJIWARA MASATOSHI; TAKEMOTO AKIRA; KAKIMOTO SHOICHI |
| 发表日期 | 1990-11-19 |
| 专利号 | JP1990281681A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a distributed feedback type semiconductor laser provided with a barrier layer structure which never skips a mode even at a high output and oscillates in a single wavelength by a method wherein the stripe width of an optical guide layer near a region whose optical density is larger than that of the other region in an element is made larger than that in the other region. CONSTITUTION:An active layer 2, a barrier layer 3, and an optical guide layer 4 are grown on a substrate 1, which is etched to form a diffraction grating 5a. Then, only the optical guide layer 4 located at the center of an element is made small in stripe width through etching. Lastly, a growth process is carried out again onto the optical guide layer 4 and both the sides of the active layer 2 to bury. The optical guide layer 4 is made small in stripe width at the center of the element, whereby a coupling constant K can be made equivalently small and the part near the center of the element is lessened in optical density. Therefore, optical density never becomes sharply non uniform in distribution, so that all oscillation of single mode can be obtained. |
| 公开日期 | 1990-11-19 |
| 申请日期 | 1989-04-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70910]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | WATANABE HITOSHI,FUJIWARA MASATOSHI,TAKEMOTO AKIRA,et al. Semiconductor laser. JP1990281681A. 1990-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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