Semiconductor laser device
文献类型：专利
| 作者 | NAKANO HIROYUKI; UOMI KAZUHISA; YAMASHITA KIICHI |
| 发表日期 | 1990-12-04 |
| 专利号 | JP1990292886A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce a semiconductor laser device in parasitic inductance by a method wherein a heat sink provided with a face level with the upper electrode of a semiconductor laser and the semiconductor laser are formed in an integral structure to constitute a semiconductor laser unit, and a bonding wire connecting them together is made irreducibly minimum in length. CONSTITUTION:The lower electrode of a semiconductor laser element 1 is fixed to a solder face 5 provided to the upper face of a semiconductor laser mounting substrate 2. A heat sink 3 is fixed to the side face of the substrate 2 so as to make its connecting face 3' nearly level with the upper electrode of the element 1 to constitute a semiconductor laser unit, and the upper electrode of the semiconductor laser element 1 is connected to the connecting face 3' of the heat sink 3 by a bonding wire 4. By this setup, the space between the upper electrode of the semiconductor laser element 1 and the connecting face 3' can be easily made as short as 0.1mm or so as the level difference between them is almost zero (smaller than 20-30mum), so that the bonding wire 4 can be made 0.2-0.3mm long. If the number of the bonding wires 4 is 2-3, a parasitic inductance induced by the bonding wires 4 becomes 0.1-0.2nH. |
| 公开日期 | 1990-12-04 |
| 申请日期 | 1989-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70918]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKANO HIROYUKI,UOMI KAZUHISA,YAMASHITA KIICHI. Semiconductor laser device. JP1990292886A. 1990-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。