Semiconductor laser
文献类型：专利
| 作者 | NAITO HIROKI; KUME MASAHIRO; SHIMIZU YUICHI |
| 发表日期 | 1991-01-14 |
| 专利号 | JP1991006875A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To more improve the light output and reliability by radiating the Joule heat, which has arisen in p-n junction, in the two directions by Poltier elements attached to both sides. CONSTITUTION:A semiconductor laser 1 is caught from above and below by heat sinks 7 and 11 of Cu, and is cooled compulsorily by Peltier elements 8 and 12. The driving of the semiconductor laser 1 is done by the voltage applied to the Cu heat sinks 7 and 1 The power sources of the Peltier elements 8 and 12 may be common. Moreover, the face opposite to the faces formed at the Cu heat sinks 7 and 11 of the Peltier elements 8 and 12 is fixed to the larger heat sink excellent in heat radiation. That is, by performing cooling from the direction opposite to the p-n junction part 3 of the semiconductor laser 1, as well the large output can be attained. |
| 公开日期 | 1991-01-14 |
| 申请日期 | 1989-06-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAITO HIROKI,KUME MASAHIRO,SHIMIZU YUICHI. Semiconductor laser. JP1991006875A. 1991-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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