Semiconductor laser device
文献类型：专利
| 作者 | HASHIMOTO MASAYASU; YONEYAMA HIROFUMI; WATABE YASUHIRO |
| 发表日期 | 1990-05-14 |
| 专利号 | JP1990125486A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To efficiently prevent a fine wavelength shift in addition to stability of stepwise temperature characteristic by placing a semiconductor laser and a photodetector on another members of the same material, and attaching them to stems. CONSTITUTION:A semiconductor laser element 1 is secured to the side face of the columnar body 31 of a stem 3 through a submount material 4 made of silicon. On the other hand, a photodetector 2 is placed fixedly on a placing base 6 made of a copper block on the stem 3, and wired with wire bonding fine wirings 7. The base 6 has 2000 times or more of the oscillation wavelength of a laser in thickness (height), approx, 2mm of half or more of the height of the body 31, is secured to a stem of the support of the body 31, and made of the same material as those of the body 31 to equalize their linear expansion coefficients. Thus, even if the element 1 is changed at 50 deg.C or higher, the shift of small oscillation mode does not occur. |
| 公开日期 | 1990-05-14 |
| 申请日期 | 1989-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70927]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO MASAYASU,YONEYAMA HIROFUMI,WATABE YASUHIRO. Semiconductor laser device. JP1990125486A. 1990-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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