Semiconductor laser device
文献类型：专利
| 作者 | NAGAI SEIICHI |
| 发表日期 | 1991-02-08 |
| 专利号 | JP1991030385A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive the simplification of the assembly process of a semiconductor laser by a method wherein a laser diode(LD) chip and a photodiode(PD) chip are assembled on a plane of a submount. CONSTITUTION:A face light emission type LD chip 1 is used and the chip 1 and a PD chip 4 are die bonded on a plane of a submount 2 incorporated in a stem 5. After this, each electrode of the chips 1 and 4 is wire bonded with each lead post 7 and a cap 8 mounted with a hologram lens 9 is installed. In this case, an emitting light from the chip 1 passes through the lens 9 to act as a light source of an optical system and a return light comes again into the lens 9, but the return light comes returning at an angle to an incident light. Therefore, by keeping the chip 4 die-bonded at the position of the return light, the good optical coupling of the return light with the monitoring PD chip can be obtained. In such a way, as the chips 1 and 4 are assembles on the same plane, die bonding and wire bonding processes can be simplified. |
| 公开日期 | 1991-02-08 |
| 申请日期 | 1989-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70931]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAGAI SEIICHI. Semiconductor laser device. JP1991030385A. 1991-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。