Semiconductor laser device
文献类型:专利
作者 | KITAJIMA SHIGEKI; KAYANE NAOKI; SASAKI SHINYA; TSUSHIMA HIDEAKI |
发表日期 | 1991-03-01 |
专利号 | JP1991048477A |
著作权人 | HITACHI LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To realize a high-speed control of light frequency using semiconductor module by means of a simple control circuit by putting a semiconductor laser side by side with a heating element for making the sum of a calorific values from said semiconductor laser and said heating element constant. CONSTITUTION:Light output 101 from a semiconductor laser 1 for light emission is under the control of an injection current control circuit 10, a calorific value stabilization circuit 20 and a temperature stabilization circuit 40. The calorific value stabilization circuit 20 controls an injection current 200 so that the sum of an injection current 200 and an induction current 100 may be constant. Thereby, the sum of a calorific value from the semiconductor laser 1 for light emission and a calorific value of the semiconductor laser 2 for light emission is constant. Further, in the temperature stabilization circuit 40 negative feedback is applied to a temperature element 5 so that the value from a temperature sensor 4 may be constant. Further, by arranging the temperature sensor 4 in a position being about equally distant from the semiconductor laser 1 for light emission and from the semiconductor laser 2 for heating, light frequency control independent of a temperature control system can be done even when the injected current 100 is changed. |
公开日期 | 1991-03-01 |
申请日期 | 1989-07-17 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/70937] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | KITAJIMA SHIGEKI,KAYANE NAOKI,SASAKI SHINYA,et al. Semiconductor laser device. JP1991048477A. 1991-03-01. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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