Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KAGAWA HITOSHI |
| 发表日期 | 1991-04-02 |
| 专利号 | JP1991076292A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To control the end faces of a resonator in reflectivity so as to prevent a semiconductor laser from deteriorating in performance by a method wherein a reflection control film is formed on, at least, one of the sides of a semiconductor laser chips to control it in reflectivity, the semiconductor chip is bonded to a mount, and the whole semiconductor is covered with an insulating film. CONSTITUTION:A wafer where the active parts of two or more semiconductor chips are formed is formed into a bar-shaped semiconductor member through cleavage, etching, or the like, and the end faces of a laser resonator are formed. Then, a dielectric multilayered film 3 is formed on the front and the rear end face of the laser resonator through an electron beam deposition method respectively to obtain the end faces of required reflectivity. Next, the bar-shaped semiconductor member where the dielectric multilayered film is formed on the end faces of the laser resonator is divided into semiconductor chips 1 by dicing. Moreover, the semiconductor chip 1 is bonded to a mount 5 to assemble a chip. Then, the whole assembly is covered with an Si3N4 film 4. |
| 公开日期 | 1991-04-02 |
| 申请日期 | 1989-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70942]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI. Manufacture of semiconductor laser device. JP1991076292A. 1991-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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