中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者WAKABAYASHI SHINICHI; NEGISHI HIDEHIKO
发表日期1991-04-18
专利号JP1991093285A
著作权人MATSUSHITA ELECTRIC IND CO LTD
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To reduce reflection returning light from a fiber end to laser and simplify their coupling with high efficiency by a method wherein when laser light from a semiconductor laser is incident on an optical fiber, angle is secured between an optical axis of the laser light and a direction of a groove for guiding the optical fiber. CONSTITUTION:A semiconductor laser 11 is mounted on a submount 18, and when light 19 from this is incident to an optical fiber clad 13 having a core 14, the optical axis 15 of an optical fiber 20 is tilted with respect to the optical axis 12 of the incident light by specific angle. That is, a V-shaped groove 17 for guiding the optical fiber having a slope approximately 10 deg. (theta1) with respect to the submount 18 is provided in advance, and the optical fiber 20 which has been obliquely ground along the groove 17 by 8 deg. (theta2) which is optimum ground angle is installed to be fixed by using resin or the like. Thus angle of 10 deg. is generated between the optical axis 15 of the fiber 20 and the optical axis 12 of the laser light 11 so that outgoing light L1 is refracted when it is incident to the fiber 20 and propagation light L2 is propagated along the optical axis 15.
公开日期1991-04-18
申请日期1989-09-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/70945]  
专题半导体激光器专利数据库
作者单位MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式
GB/T 7714
WAKABAYASHI SHINICHI,NEGISHI HIDEHIKO. Semiconductor laser device. JP1991093285A. 1991-04-18.

入库方式: OAI收割

来源:西安光学精密机械研究所

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