Semiconductor light emitting element and manufacture thereof
文献类型：专利
| 作者 | ITO YOSHINORI; SEKII HIROSHI; IMANAKA KOICHI |
| 发表日期 | 1991-06-20 |
| 专利号 | JP1991145173A |
| 著作权人 | OMRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent a buried layer from being separated off and to improve a semiconductor light emitting element in heat dissipating property by a method wherein a metal layer is provided to the surface of a lower part on both the sides of a ridge so as not to come into contact with the ridge, the high resistance buried layer is provided onto the metal layer so as to be nearly level with the ridge, and an electrode is provided to the upside of the buried layer. CONSTITUTION:An N-GaAs layer 2, an N-superlattice buffer layer 3, an N-AlGaAs layer 4, a GRIN-AlGaAs layer 5, a quantum well active layer 6, a GRIN-AlGaAs layer 7, a P-AlGaAs layer 8, and a P-GaAs layer 9 are grown on an N-GaAs subtrate 1, a mask 12 is formed thereon, the unmasked part is removed so far as a halfway point of the P-AlGaAs layer 8 to form a ridge. In succession, a metal layer 11 is formed on the P-AlGaAs layer 8 left unremoved on both the sides of the ridge so as not to come into contact with the ridge. Moreover, an alpha-Si buried layer 10 is formed on the whole surface of a semiconductor wafer to bury the ridge. A mask 10 is formed on the upside of the alpha-Si buried layer 10 excluding a part just above the ridge, and the unmasked part is removed until the mask electrode 12 is exposed. Lastly, a P-side electrode 13 is formed continuously covering the upside of the buried layer 10 through the upside of the ridge. |
| 公开日期 | 1991-06-20 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70953]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON CORP |
| 推荐引用方式 GB/T 7714 | ITO YOSHINORI,SEKII HIROSHI,IMANAKA KOICHI. Semiconductor light emitting element and manufacture thereof. JP1991145173A. 1991-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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