Semiconductor laser device
文献类型：专利
| 作者 | KONO MASAKI |
| 发表日期 | 1991-06-20 |
| 专利号 | JP1991145784A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a wire bonding operation to be easily automated and a semiconductor laser device to be easily handled by wire-bonding an LD chip to a submount into a subassembly by a method wherein only a certain surface region of the conductive mount is isolated, and an insulating layer is formed on the region where the LD chip is die-bonded. CONSTITUTION:A crystal is grown on a P-type conductivity substrate to constitute an LD chip 1, where an electrode on a substrate side is made to serve as a P electrode 2 and an electrode located near to a light emitting point serves as an N electrode 3. Especially, the LD chip 1 is die-bonded to a submount 4 making the N electrode 3 face toward the submount 4 so as to be improved in heat dissipating property. At this point, the submount 4 is electrically conductive, but the surface of the submount 4 is isolated, an insulating layer SiO2 5 is formed on the surface of a region of the submount 4 where the LD chip 1 is die-bonded. Thereafter, a prescribed wire bonding operation is carried out, whereby a stem and the anode of an LD chip are assembled in common and a stem and the cathode of the LD chip are assembled in common. |
| 公开日期 | 1991-06-20 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70954]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONO MASAKI. Semiconductor laser device. JP1991145784A. 1991-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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