Semiconductor laser device
文献类型：专利
| 作者 | OTA YOICHIRO |
| 发表日期 | 1991-06-20 |
| 专利号 | JP1991145782A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device of high reliability where heat induced in an active layer is efficiently dissipated outside by a method wherein a hole is bored in a GaAs substrate, and material higher than the substrate in thermal conductivity is filled into the hole concerned. CONSTITUTION:Electrons and holes injected through electrodes A2 and B6 are recombined together in an active layer 5a to emit light. Heat induced with the emission of light is dissipated outside traveling through a GaAs substrate 3, a buried part 4, and a block At this point, if the buried part 4 is formed of mateiral of high thermal conductivity, heat can be quickly dissipated, which is conductive to the improvement of a semiconductor laser device in reliability. Moreover, the batter the adhesion between the GaAs substrate 1 and the buried part 3 is, the more the semiconductor laser device is improved in heat dissipating property, so that the buried part 4 is formed in such a manner that melt is poured into a hole bored in the GaAs substrate 3 and assimilated to it. In, Na, or Li is adapted for the material of the buried part 4, taking their melting point and thermal conductivity into consideration. |
| 公开日期 | 1991-06-20 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70955]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTA YOICHIRO. Semiconductor laser device. JP1991145782A. 1991-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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