Manufacture of semiconductor laser device
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI; NAKAJIMA YASUO; WATANABE HITOSHI; TAKEMOTO AKIRA |
| 发表日期 | 1991-06-24 |
| 专利号 | JP1991147387A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce in size a semiconductor laser having small harmonic wave distortion by composing a resistor for altering current junction ratio of 2-electrode DFB laser of a metal film resistor disposed at the side of a laser. CONSTITUTION:Two metal film resistors 15, 25 and a bonding pad 27 are disposed at the side of a 2-electrode DFB laser. Then, a front side electrode 3, a metal film resistor 16 and the resistor 15, the pad 27 are connected, and a rear side electrode 4 is connected to one end of the resistor 25. Then, a prober stylus is stood on the surface of the resistor 25, a closed circuit with the pad 27 is formed, and a DC current and a modulated current are injected to the laser An optical output at this time is received by a photodiode, and a harmonic wave distortion is measured. The position of the stylus is varied while monitoring the value of the harmonic wave distortion, the position of the resistor when the distortion is minimum or satisfies specifications is determined, and a bonding wire is connected to the position 26. |
| 公开日期 | 1991-06-24 |
| 申请日期 | 1989-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70957]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI,NAKAJIMA YASUO,WATANABE HITOSHI,et al. Manufacture of semiconductor laser device. JP1991147387A. 1991-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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