Manufacture of semiconductor device
文献类型：专利
| 作者 | HASEGAWA KAZUYOSHI |
| 发表日期 | 1991-06-24 |
| 专利号 | JP1991148192A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To enable junction of a semiconductor element, a submount and a heat sink block simultaneously by forming an Au layer and an Sn layer on each junction side of a semiconductor element submount and the heat sink block by specifying a layer thickness ratio thereof and by dissolving them for function. CONSTITUTION:After Au layers 3, 4, 7, 8 are formed on each junction side of a semiconductor element 1, a submount 2 and a heat sink block 6, Sn layers 11, 12 of specified shape are formed on both junction sides of Au layers 4, 7 of the submount 2. A layer thickness ratio of the Au layers 4, 7 and the Sn layers 11, 12 on each junction side are made 3:2 and the submount 2 and the heat sink block 6 are laminated and dissolved by heating for junction. Thereby, it is possible to join the semiconductor element 1, the submount 2 and the heat sink block 6 simultaneously. |
| 公开日期 | 1991-06-24 |
| 申请日期 | 1989-11-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70958]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HASEGAWA KAZUYOSHI. Manufacture of semiconductor device. JP1991148192A. 1991-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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