Semiconductor device
文献类型：专利
| 作者 | ETO HIROYUKI; MURAKAMI HIDEKAZU; NAKAGAWA KIYOKAZU; OSHIMA TAKU; NAKAMURA NOBUO; MIYAO MASANOBU |
| 发表日期 | 1991-08-05 |
| 专利号 | JP1991179729A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To make the distortion of a hetero-junctioned single crystal semiconductor in the surface and film thickness directions controllable without depending upon the elastic constant by a method wherein a groove is formed on the surface of a semiconductor substrate and then the second semiconductor is coupled with a single crystal semiconductor having the first lattice constant at the bottom surface of the groove while the second semiconductor is coupled with the single crystal semiconductor having the third lattice constant at the side surfaces. CONSTITUTION:When the lattice constants of the first and second semiconductors are equalized with each other but differentiated from that of the second semiconductor, a striped groove is formed on a GaAs substrate 1 by electron beam lithography and dryetching process. The substrate these formed is chemically processed and then led into a molecular beam growing device so as to clean up the surface of the substrate. Next, an In1-xGaxAs single crystal 2 is deposited in the substrate Through these procedures, the lattice constants in the surface and film thickness directions of the crystal 2 hetero- grown in the groove are equalized to that of the GaAs substrate 1 in contact with the bottom surface and the side surfaces of the single crystal 2. |
| 公开日期 | 1991-08-05 |
| 申请日期 | 1989-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70964]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ETO HIROYUKI,MURAKAMI HIDEKAZU,NAKAGAWA KIYOKAZU,et al. Semiconductor device. JP1991179729A. 1991-08-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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