Semiconductor laser
文献类型：专利
| 作者 | NAGASHIMA KENJI |
| 发表日期 | 1991-08-16 |
| 专利号 | JP1991188692A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive the simplification of the constitution of a semiconductor laser and a reduction in the size of the laser by a method wherein the laser is formed into the constitution, in which a lowthreshold current type semiconductor laser element is bonded on a lead frame and the element is covered with a protective cover. CONSTITUTION:A low-threshold current type semiconductor laser element 1 is placed on a lead frame 2 and the element is bonded on the lead frame 2 by die bonding. A protective cover 5 is bonded on the lead frame 2 in such a way as to cover the element Thereby, the generation of heat which accompanies a laser oscillation is suppressed low, the temperature characteristics of a threshold current are improved and a constant-current drive can be performed. Accordingly, the constitution of a semiconductor laser is miniaturized, simplified and the laser can be stably used without using an autopower control circuit or the like. |
| 公开日期 | 1991-08-16 |
| 申请日期 | 1989-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70966]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | NAGASHIMA KENJI. Semiconductor laser. JP1991188692A. 1991-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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