Semiconductor laser device
文献类型：专利
| 作者 | IWAMOTO KOJI; TSUKIKI KAZUNORI |
| 发表日期 | 1991-09-17 |
| 专利号 | JP1991211780A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To inhibit definitely a rise in the temperature of an active layer and enhance the reliability and yield of a semiconductor laser device during the operation of the device by mounting the semiconductor laser device based on a metal layer comprising mainly Sn which contains a specific amt% of Ag to a heat sink. CONSTITUTION:A semiconductor laser device mounted by a metal layer comprising mainly Sn which contains 1 to 30wt.% of Ag, does not produce any unreactive section against a die bond metal in a die bond section to a heat sink tank of a semiconductor laser 5. This construction makes it possible to reduce heat resistance in the semiconductor laser 5. Particularly, between the active layer and the heat sink 1, and produce excellent conduction. It is, therefore, possible to inhibit definitely a rise in the temperature of the active layer during the performance of the semiconductor laser and enhance reliability and yield. At the same time, it is also possible to enhance performance guarantee temperature, increase the maximum optical output, reduce operation electric current in a rated optical output performance. Furthermore, it is possible to enhance various characteristics, such as controlled deterioration of semiconductor elements, that is, prolonged the life of an MTTF. |
| 公开日期 | 1991-09-17 |
| 申请日期 | 1990-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70968]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | IWAMOTO KOJI,TSUKIKI KAZUNORI. Semiconductor laser device. JP1991211780A. 1991-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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