Semiconductor laser
文献类型：专利
| 作者 | IWAMOTO KOJI; YAMAGUCHI NOZOMI; TSUBOI KUNIO; MAKIGUCHI SHIGEE; MITA ARIO; MOTOHORI ISAO |
| 发表日期 | 1991-09-19 |
| 专利号 | JP1991214684A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve optical properties such as uniformity of light intensity distribution, etc., by leading out plural lead wires to the electrode metallic layer provided at the surface so that each bonding position may be scattered on the part corresponding to a light emitting area. CONSTITUTION:By scattering the die-bonding positions of lead wires 3 on the light emitting area of a semiconductor laser 1, uniform current distribution, that is, gain distribution concerning the width direction of the light emitting area 4 can be obtained even in the broad area laser which has broad light emitting area 4. Accordingly, uniform light intensity distribution can be obtained. In this case, though the lead wire 3 is connected above the light emitting area on the electrode metallic layer 2 by ultrasonic welding, or the like, a good laser beam can be obtained without damaging the light emitting area 4. Hereby, if the nonuniformity of the light intensity distribution can be avoided, the deterioration of the crystal at the end of light emitting area can be avoided to improve properties. |
| 公开日期 | 1991-09-19 |
| 申请日期 | 1990-01-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70969]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | IWAMOTO KOJI,YAMAGUCHI NOZOMI,TSUBOI KUNIO,et al. Semiconductor laser. JP1991214684A. 1991-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。