Semiconductor laser device
文献类型：专利
| 作者 | NAGAI SEIICHI |
| 发表日期 | 1991-10-01 |
| 专利号 | JP1991222384A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a laser diode to be optically coupled well with a monitoring PD by a method wherein a planar light emitting type laser diode is assembled on a photodiode where a laser diode is constituted. CONSTITUTION:A monitoring PD 4 is formed on a sub-mount 2, a planar light emitting type LD chip 9 is assembled on the monitoring PD 4, the sub-mount 2 is built in a stem 5, and the LD chip 9 and the PD 4 and wire-bonded to a lead wire 7 with a gold wire and electrically connected. A cap 8 is welded to the stem 5. The rear of the planar light emitting type LD 4 is formed smaller than 100% in reflectively, so that light can penetrate through the LD 4 from the rear side. The planar light emitting type LD 4 is assembled on the monitoring PD 4, the outgoing light from the rear of the planar light emitting type LD 4 is incident on the monitoring PD 4, and they are optically coupled together well. The bonding surfaces of an LD and a PD are in parallel with each other, so that a die bonding and a wire bonding process can be simplified. |
| 公开日期 | 1991-10-01 |
| 申请日期 | 1990-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70972]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAGAI SEIICHI. Semiconductor laser device. JP1991222384A. 1991-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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