Semiconductor laser
文献类型：专利
| 作者 | TAKEMOTO AKIRA; NAKAJIMA YASUO; WATANABE HITOSHI |
| 发表日期 | 1991-10-30 |
| 专利号 | JP1991244179A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the size of a semiconductor laser by forming a metal-film resistor on a semiconductor element. CONSTITUTION:After forming surface electrodes 3 and 4 on a semiconductor laser crystal 1, an insulating film is vapor-deposited on those electrodes 3 and 4. Next, patterning is done to form insulating films 8 and 9. Then, metal-film resistors 10 and 11 are formed, and a backside electrode 2 is further formed. After that, an element is mounted on a heat sink and wires 12 and 13 are connected onto resistors 10 and 11 so as to obtain a desired resistance value with the resistors 10 and 1 By this constitution, it becomes possible to adjust a current ratio of the current introduced into each region of the semiconductor laser by varying a ratio of resistance value of the resistors 10 and 1 Accordingly, it is possible to vary a refractive index and a gain in the regions of said semiconductor laser. Also, the size of the semiconductor laser can be reduced. |
| 公开日期 | 1991-10-30 |
| 申请日期 | 1990-02-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70975]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKEMOTO AKIRA,NAKAJIMA YASUO,WATANABE HITOSHI. Semiconductor laser. JP1991244179A. 1991-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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