Semiconductor laser
文献类型：专利
| 作者 | UOMI KAZUHISA; AOKI MASAHIRO; TSUCHIYA TOMONOBU; SASAKI SHINJI; KAYANE NAOKI |
| 发表日期 | 1991-11-27 |
| 专利号 | JP1991266489A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase a semiconductor laser in a range of variable wavelength by a method wherein the light coupling constant of a diffraction grating and the length of a resonator are specified. CONSTITUTION:A diffraction grating 2 where lambda/4 shifts 3 are provided is formed on an N-InP substrate 1, then an N-InGaAsP guide layer 4, a multi-quantum well active layer 5, and a P-InP layer 6 are successively grown, and a P electrode 7, an N electrode 8, and a phase shift injection electrode 9 are formed. Provided that the light coupling constant of the diffraction grating is represented by K, and L denotes the length of a resonator, K and L are so set as to make KL larger than 3, and the length L of the resonator is set equal to 1mm or below. By this setup, a wavelength variable semiconductor laser can be widened in a range of variable wavelength. |
| 公开日期 | 1991-11-27 |
| 申请日期 | 1990-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70983]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,AOKI MASAHIRO,TSUCHIYA TOMONOBU,et al. Semiconductor laser. JP1991266489A. 1991-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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