Semiconductor laser device
文献类型：专利
| 作者 | OTA YOICHIRO |
| 发表日期 | 1991-12-02 |
| 专利号 | JP1991270286A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminate the necessity of a complex glass cap and precise works in an N2-gas atmosphere by burying the chip of a semiconductor laser in glass. CONSTITUTION:After a block 2, sub-mount chip 3, and chip 4 are mounted on a stem 1 and necessary bonding works, etc., are performed, the stem 1 is dipped in a prescribed molten liquid of glass with the chip 4 on the bottom side and taken out for solidification. As-Se glass, V2O5-WO3 glass, Sb2O3-TeO3 glass, etc., are suitable for the glass, because the glass must be melted at a temperature at which elements, etc., are not damaged. Since the chip 4 is completely buried in the glass 5 in such way, the chip 4 is not subjected any influence of the oxygen or moisture in the air and, accordingly, the chip 4 is not deteriorated by the oxygen and moisture. Therefore, an inexpensive semiconductor laser can be obtained by simplified works. |
| 公开日期 | 1991-12-02 |
| 申请日期 | 1990-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70986]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTA YOICHIRO. Semiconductor laser device. JP1991270286A. 1991-12-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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