Semiconductor laser
文献类型：专利
| 作者 | YAMADA ATSUSHI; MURAKAMI SEIICHI; NAGAI HARUO |
| 发表日期 | 1991-12-05 |
| 专利号 | JP1991274784A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To provide a semiconductor laser device, having a narrow spectral line and variable in wavelength within a gain range, by employing duel-laser structure in which one laser is furnished with means for feeding a specific wavelength within the gain range back to an active layer. CONSTITUTION:A dual-resonator laser 1 has a nonreflective film 2 on one end, and it is coupled through an object lens 3 to an external refractive grating 4. The light from the laser is fed back to an active layer 5 to provide single- mode oscillation with a narrow spectral line of selected wavelength. The angle of the reflective grating 4 is varied by a rotating mechanism 6 to vary the feedback wavelength so that the wavelength can be varied within the range of gain of semiconductor lasers 1a and 1b. The wavelength can be continuously varied by controlling currents to semiconductor lasers 1a and 1b. |
| 公开日期 | 1991-12-05 |
| 申请日期 | 1990-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70987]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | YAMADA ATSUSHI,MURAKAMI SEIICHI,NAGAI HARUO. Semiconductor laser. JP1991274784A. 1991-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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