Semiconductor laser
文献类型：专利
| 作者 | HINO ISAO |
| 发表日期 | 1991-12-06 |
| 专利号 | JP1991276787A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To easily manufacture this laser whose reliability and performance are high by a method wherein a ternary or higher III-V compound mixed crystal in which the bonding length between group III atoms and group V atoms is different from each other in crystals is used as an active layer and only a part near the reflection edge or the radiation edge of a beam is doped with a prescribed or larger amount of impurities which make the resistance of a semiconductor layer high. CONSTITUTION:A ternary or higher III-V compound mixed crystal in which the bonding length between group III atoms and group V atoms is different from each other in crystals is used as an active layer 3. Only parts near edges 8 used as reflection faces or radiation faces of a beam in the active layer 3 are doped with impurities of about 5X10cm or lager amount to make a resistance high. The beam is not absorbed at window parts near the edges whose Eg is large; it is possible to prevent the damage of the beam and the deterioration at the edges. Since the window parts are high-resistance insulating regions, an electric current is concentrated efficiently in the regions which give a laser gain. As a result, a semiconductor laser whose reliability and output are high can be realized by an easy manufacturing method. |
| 公开日期 | 1991-12-06 |
| 申请日期 | 1990-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70989]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HINO ISAO. Semiconductor laser. JP1991276787A. 1991-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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