Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KURIHARA KAZUAKI; KAWARADA MOTONOBU; SASAKI KENICHI |
| 发表日期 | 1991-12-26 |
| 专利号 | JP1991295288A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a thermal diffusion layer which is formed of a thin diamond film of high quality and hardly separated from a heat sink to be quickly formed in a simple process by a method wherein the thermal diffusion layer of a thin diamond film is formed on the restricted region on the heat sink through a vapor phase synthesis method. CONSTITUTION:A copper heat sink 10 is placed on a cooling substrate holder 2 inside a reaction chamber 1 of a DC plasma CVD device, and a mask 7 formed of iron family element provided with an opening 8 is mounted on the upside of the heat sink 10. The pressure of the reaction chamber 1 is reduced to 50Torr or so through an exhaust system 9, hydrogen gas containing 1% of methane gas is fed to a nozzle 3 at a flow rate of 50l/min, a discharge power of 5kW is applied between an anode 5 and a cathode 6 provided to the nozzle 3 from a direct power supply 4, hydrogen gas containing 1% of methane gas is turned into plasma, the plasma jet concerned is spouted against the heat sink to form a thermal diffusion layer on an upside region of the heat sink 10 correspondent to the opening 8 of the mask 7. |
| 公开日期 | 1991-12-26 |
| 申请日期 | 1990-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70999]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KURIHARA KAZUAKI,KAWARADA MOTONOBU,SASAKI KENICHI. Manufacture of semiconductor laser device. JP1991295288A. 1991-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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