半導体レーザ素子の製造方法
文献类型：专利
| 作者 | 角田 篤勇; ▲高▼橋 向星; 細田 昌宏; 須山 尚宏; 松井 完益 |
| 发表日期 | 1997-06-20 |
| 专利号 | JP2664794B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子の製造方法 |
| 英文摘要 | PURPOSE:To enable heat released in a double heterostructure to be efficiently dissipated by a method wherein an AlGaAs etching stop layer excellent in thermal conductivity and an AlGaAs layer with which a stripe groove is filled in are provided. CONSTITUTION:A double hetero structure of AlGaInP crystal is formed on a GaAs substrate 1, an AlGaAs etching stop layer 7 is provided, and a GaAs light absorbing layer 8 is deposited. The GaAs light absorbing layer 8 is selectively etched to form a stripe groove which is not so deep as to reach to the AlGaAs etching stop layer 8. Furthermore, the GaAs layer near the surface of the GaAs etching stop layer 8 is evaporated in an MBE device to expose the surface of the AlGaAs layer etching stop layer 7 in the stripe groove, and an AlGaAs layer 9 is formed so that the stripe groove is filled in therewith. By this setup, a semiconductor laser device which is possessed of a structure excellent in heat dissipating property and able to continuously oscillate visible rays at a room temperature can be obtained. |
| 公开日期 | 1997-10-22 |
| 申请日期 | 1990-05-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71006]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 角田 篤勇,▲高▼橋 向星,細田 昌宏,等. 半導体レーザ素子の製造方法. JP2664794B2. 1997-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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