Semiconductor laser device
文献类型:专利
作者 | HAMADA TAKESHI |
发表日期 | 1992-02-07 |
专利号 | JP1992037082A |
著作权人 | MATSUSHITA ELECTRON CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To contrive an efficient light output monitor by a method wherein an emitting beam from a semiconductor laser mounted on a heat sink having a reflection type grating is made to incide in a photodiode for monitor use via the grating. CONSTITUTION:A semiconductor laser chip 1 is bonded on a submount 2 in such a way that the position of its first end surface coincides with the end part of the submount 2 and the mount 2 is bonded on a heat sink 4 adhered on a metal plate 3. A photodiode 5 for monitor use is arranged on the plate 3 in such a way as to oppose to the rear end surface of the chip The pattern of a grating 6 of this sink 4 is decided in such a way that it is formed into the form of an interference pattern, which is generated when the emitting point of the chip 1 and the central part of the diode 5 are used as two light sources. An emitting beam from the rear end surface of the chip 1 is diffracted by the grating 6 and can be made to incide in the central part of the diode 5. Accordingly, there is no loss of the amount of light and an efficient light output monitor can be contrived. |
公开日期 | 1992-02-07 |
申请日期 | 1990-05-31 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/71012] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRON CORP |
推荐引用方式 GB/T 7714 | HAMADA TAKESHI. Semiconductor laser device. JP1992037082A. 1992-02-07. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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