Semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA NORIYUKI; YOSHIKAWA AKIO; NAKANISHI HIDEYUKI |
| 发表日期 | 1992-02-13 |
| 专利号 | JP1992043694A |
| 著作权人 | MATSUSHITA ELECTRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To handle a high-frequency and high-output signal at higher speed by a method wherein an integrated circuit chip made of a semiconductor material, other than silicon, which can constitute a higher-speed device is combined on a silicon substrate. CONSTITUTION:A V-groove region 2 situated in one part of a silicon substrate 1 and a terrace region 3 situated beside it are formed; a semiconductor laser chip 4 is fixed to a part near the V-groove region 2 and on the terrace region 3. A GaAs integrated circuit chip 5 bonded to and arranged on the surface of the silicon substrate 1 in the same manner is connected by using an interconnection 7. The GaAs integrated circuit chip 5 is constituted of a semiconductor material other than silicon. |
| 公开日期 | 1992-02-13 |
| 申请日期 | 1990-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71014]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRON CORP |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA NORIYUKI,YOSHIKAWA AKIO,NAKANISHI HIDEYUKI. Semiconductor laser device. JP1992043694A. 1992-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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