半導体発光装置
文献类型：专利
| 作者 | 田村 英男; 岡田 眞琴; 吉村 公孝 |
| 发表日期 | 1997-04-04 |
| 专利号 | JP2622029B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置 |
| 英文摘要 | PURPOSE:To easily operate even at any interval of light emitting points due to small thermal interference between the points by mounting a second high melting point metal layer having a lower melting point than that of a first high melting point metal layer. CONSTITUTION:An isolating groove 22 formed by electrically isolating between light emitting units 2. formed in a flat state on a semiconductor chip 20 for a 2-beam semiconductor laser is secured to a heat sink 24 through an electrically insulating submount 23. Further, it is operated as a function of an ohmic contact electrode of the chip 20. An Au-Zn alloy layer 26 is formed adjacent to an Au-Ge solder layer 25. A first high melting point metal layer 28 prevents mixture of the Au-Zn solder layer to be operated as a function of the ohmic contact electrode and the layer 25. Thus, the rise of the ohmic contact electrode resistance does not occur. Further, contact failure of the layer 25 with a wiring electrode layer for an electrode selectively formed on the submount surface does not occur, and thereby a semiconductor light emitting device having high reliability is obtained. |
| 公开日期 | 1997-06-18 |
| 申请日期 | 1990-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71026]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 田村 英男,岡田 眞琴,吉村 公孝. 半導体発光装置. JP2622029B2. 1997-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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