Manufacture of semiconductor device
文献类型：专利
| 作者 | KONDO MASAKI; MATSUMOTO AKIHIRO; SASAKI KAZUAKI; TAKEOKA TADASHI; YAMAMOTO SABURO |
| 发表日期 | 1992-08-06 |
| 专利号 | JP1992216688A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To improve the homology of a window layer grown on a resonator end surface, and obtain a high output semiconductor laser of high oscillation efficiency whose beam shape is superior, by preventing the growth of the window layer on a multilayered structure growth surface, by covering said surface with growth inhibitor when the window layer is grown. CONSTITUTION:A semiconductor laser wherein a multilayered structure containing an active layer 104 is formed on a substrate 100 is made an inner structure. On the resonator end surface 107 thereof, a semiconductor layer whose forbidden bandwidth is larger than the active layer 104 is formed by a vapor growth method, and turned into a window layer 120. When the window layer 120 is formed, a multilayered structure growth surface 108 is covered with growth inhibitor 130. Thereby the supply of material of a semiconductor layer turning to the window layer 120 to the surface 108 is interrupted or the supply amount is reduced, so that the growth of the semiconductor layer on the surface 108 is restrained. For example, on a susceptor 130, the surface 108 is set so as to face downward, and brought into close contact with the susceptor 130. In this state, the window layer is grown. |
| 公开日期 | 1992-08-06 |
| 申请日期 | 1990-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71035]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | KONDO MASAKI,MATSUMOTO AKIHIRO,SASAKI KAZUAKI,et al. Manufacture of semiconductor device. JP1992216688A. 1992-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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