Semiconductor laser device
文献类型：专利
| 作者 | WATABE YASUHIRO; YABUUCHI TAKATOSHI; NOISSHIKI YOSHIO |
| 发表日期 | 1992-10-16 |
| 专利号 | JP1992293287A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve heat dissipation and productivity by composing a heat sink provided between a semiconductor laser element and a metal block of Si or Mo series, and forming a thin film on a surface of the block or the element. CONSTITUTION:Since a heat sink 11 made of a thin film is formed on a surface 12 of a metal block 7 or a surface 19 of a semiconductor laser element 1 thereby to form the sink 11 thin, its heat resistance value is reduced, and a temperature rise of the element 1 is reduced. Further, since a material of Si or Mo series of the material of the sink 11 has substantially the same thermal expansion coefficient as that of the element 1, its thermal stress distortion is small, and a material of Si series and particularly an amorphous Si is easily formed as a film at a relatively low temperature. Thus, heat dissipating and productivity are improved. |
| 公开日期 | 1992-10-16 |
| 申请日期 | 1991-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71049]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | WATABE YASUHIRO,YABUUCHI TAKATOSHI,NOISSHIKI YOSHIO. Semiconductor laser device. JP1992293287A. 1992-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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