Semiconductor laser device
文献类型：专利
| 作者 | OKAI MAKOTO |
| 发表日期 | 1992-11-16 |
| 专利号 | JP1992326781A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To get a semiconductor laser device which has the property of frequency modulation sensitivity being flat over wide band. CONSTITUTION:This semiconductor laser device has a diffraction grating 2 of cycles being different in the central region and the right and left regions of a resonator. Moreover, an electrode 6 on P side is divided in plural numbers. Hereby, this changes the rate of the coupling between the light and the diffraction grating of two cycles. A semiconductor device high in frequency modulation sensitivity property can be gotten, and as a result, the effect of heat can be removed, and the property of frequency modulation sensitivity being flat over the wide band of 10kHz-10GHz can be gotten. |
| 公开日期 | 1992-11-16 |
| 申请日期 | 1991-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71055]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OKAI MAKOTO. Semiconductor laser device. JP1992326781A. 1992-11-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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