Distributed feedback semiconductor laser
文献类型：专利
| 作者 | ISHINO, MASATO; KITOH, MASAHIRO; OTSUKA, NOBUYUKI; MATSUI, YASUSHI |
| 发表日期 | 1996-07-23 |
| 专利号 | US5539766 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer. |
| 公开日期 | 1996-07-23 |
| 申请日期 | 1994-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71233]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ISHINO, MASATO,KITOH, MASAHIRO,OTSUKA, NOBUYUKI,et al. Distributed feedback semiconductor laser. US5539766. 1996-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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