Semiconductor laser module
文献类型：专利
| 作者 | MUGINO, AKIRA; SHIMIZU, TAKEO |
| 发表日期 | 2002 |
| 专利号 | US6335944 |
| 著作权人 | THE FURUKAWA ELCTRIC CO., LTD |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser module |
| 英文摘要 | A semiconductor laser module of an external-cavity type in which a GaAs/AlGaAs-based semiconductor laser having ripples in the gain-wavelength characteristic thereof and an optical transmission medium including a Bragg grating are optically coupled by an optical coupling member. A gain peak wavelength (lambd(Ith)) for the case where the modularized semiconductor laser is driven with a threshold current (Ith) is set on the shorter-wavelength side of the reflection center wavelength (lambdBG) of the Bragg grating, a gain peak wavelength (lambd(Iop)) of the semiconductor laser for a maximum operating current (Iop) is set on the longer-wavelength side of the gain peak wavelength (lambd(Ith)), a pulling wavelength width (lambdPULL) and a de-tuning width (lambddetun) of the semiconductor laser module are set so that the de-tuning width (lambddetun) is smaller than the pulling wavelength width (lambdPULL), the resulting difference (=lambdPULL-lambddetun) is greater than the full width at half maximum of the reflection spectrum of the Bragg grating, and the gain peak wavelength (lambd(Ith)) is on the longer-wavelength side of a limit value (lambdLIMIT). |
| 公开日期 | 2002 |
| 申请日期 | 2000-09-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71568]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELCTRIC CO., LTD |
| 推荐引用方式 GB/T 7714 | MUGINO, AKIRA,SHIMIZU, TAKEO. Semiconductor laser module. US6335944. 2002-01-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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