Semiconductor laser
文献类型：专利
| 作者 | AOYAGI, TOSHITAKA; SHIRAI, SATOSHI |
| 发表日期 | 2007-10-02 |
| 专利号 | US7277465 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | In a refractive index coupling distributed semiconductor laser having a Λ/2-phase-shift distributed feedback structure with a diffraction grating having a refractive index coupling property on an active layer, when viewed in a light distributed feedback direction, a value of (duty of a high refractive index portion)/(duty of a low refractive index portion) of a diffraction grating in a rear end face region is larger than that of a diffraction grating in a front end face region. In this manner, a coupling coefficient κ2 in a front end face region of a conventional semiconductor laser is smaller than a coupling coefficient κ1 in a rear end face region and is larger than 100 cm− |
| 公开日期 | 2007-10-02 |
| 申请日期 | 2003-08-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71650]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | AOYAGI, TOSHITAKA,SHIRAI, SATOSHI. Semiconductor laser. US7277465. 2007-10-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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