Semiconductor laser device
文献类型：专利
| 作者 | HASHIMOTO, REI; SUGAI, MAKI; HWANG, JONGIL; HATTORI, YASUSHI; SAITO, SHINJI; TOHYAMA, MASAKI; NUNOUE, SHINYA |
| 发表日期 | 2014-02-11 |
| 专利号 | US8649408 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe. |
| 公开日期 | 2014-02-11 |
| 申请日期 | 2010-09-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71843]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | HASHIMOTO, REI,SUGAI, MAKI,HWANG, JONGIL,et al. Semiconductor laser device. US8649408. 2014-02-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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