中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser element

文献类型:专利

作者MASUI, SHINGO; KAWATA, YASUHIRO; FUJIMOTO, HIDEYUKI; MICHIUE, ATSUO
发表日期2015-03-31
专利号US8995492
著作权人NICHIA CORPORATION
国家美国
文献子类授权发明
其他题名Semiconductor laser element
英文摘要To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.
公开日期2015-03-31
申请日期2012-07-04
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/71851]  
专题半导体激光器专利数据库
作者单位NICHIA CORPORATION
推荐引用方式
GB/T 7714
MASUI, SHINGO,KAWATA, YASUHIRO,FUJIMOTO, HIDEYUKI,et al. Semiconductor laser element. US8995492. 2015-03-31.

入库方式: OAI收割

来源:西安光学精密机械研究所

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