Semiconductor device
文献类型：专利
| 作者 | YAMAMOTO, YOUSUKE |
| 发表日期 | 1998-04-28 |
| 专利号 | US5744857 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device |
| 英文摘要 | A semiconductor device includes a silicon substrate having a surface and a 20 DIFFERENCE 150 mu m deep recess produced at the surface by anisotropic etching, the recess having a bottom and a plurality of side walls; an electrode disposed on a region at the bottom of the recess, the region including an element region where a semiconductor element is to be mounted and a wire bonding region where a wire is to be bonded; a semiconductor element mounted on a portion of the electrode within the element region; and a wire bonded to a portion of the electrode within the wire bonding region. In this semiconductor device, since the electrode is disposed at the flat bottom of the recess, there is no difference in level, i.e., no step, in the region, where the electrode is disposed, between the element region and the wire bonding region. Therefore, unwanted breaking of the electrode is avoided, and degradation of characteristics due to such a breaking is avoided. |
| 公开日期 | 1998-04-28 |
| 申请日期 | 1996-08-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71953]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, YOUSUKE. Semiconductor device. US5744857. 1998-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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