Nitride semiconductor laser device
文献类型：专利
| 作者 | TSUDA, YUHZOH; HANAOKA, DAISUKE; ISHIDA, MASAYA |
| 发表日期 | 2009-08-11 |
| 专利号 | US7573924 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser device |
| 英文摘要 | A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm. |
| 公开日期 | 2009-08-11 |
| 申请日期 | 2005-05-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/72141]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TSUDA, YUHZOH,HANAOKA, DAISUKE,ISHIDA, MASAYA. Nitride semiconductor laser device. US7573924. 2009-08-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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