Semiconductor device
文献类型：专利
| 作者 | MOTODA, TAKASHI |
| 发表日期 | 2015-05-26 |
| 专利号 | US9041197 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device |
| 英文摘要 | A semiconductor device includes a semiconductor element having a substrate of GaAs, InP, or GaN, and an element securing member bonded to the semiconductor element by solder. The element securing member is a composite material of Cu and carbon or a composite of Al and carbon. A stem is connected to the element securing member, and a cap is secured to the stem. The cap covers the semiconductor element and the element securing member. The stem and the element securing member are made of the same material. |
| 公开日期 | 2015-05-26 |
| 申请日期 | 2014-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/72277]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | MOTODA, TAKASHI. Semiconductor device. US9041197. 2015-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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