Manufacturing method of compound semiconductor wafer
文献类型：专利
| 作者 | TAMURA, SATOSHI; OGAWA, MASAHIRO; ISHIDA, MASAHIRO; YURI, MASAAKI |
| 发表日期 | 2002-07-31 |
| 专利号 | EP1227176A2 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacturing method of compound semiconductor wafer |
| 英文摘要 | A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and the compound semiconductor film are separated from each other by irradiation of laser light, polishing of the substrate, etching, cutting, etc. Consequently, the resulting compound semiconductor film is used as a free-standing wafer. |
| 公开日期 | 2002-07-31 |
| 申请日期 | 2002-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73701]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAMURA, SATOSHI,OGAWA, MASAHIRO,ISHIDA, MASAHIRO,et al. Manufacturing method of compound semiconductor wafer. EP1227176A2. 2002-07-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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