Semiconductor laser device and method of manufacturing the same
文献类型：专利
| 作者 | MIYACHI, MAMORU; WATANABE, ATSUSHI; TAKAHASHI, HIROKAZU; KIMURA, YOSHINORI |
| 发表日期 | 2006-08-29 |
| 专利号 | US7098063 |
| 著作权人 | PIONEER CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method of manufacturing the same |
| 英文摘要 | A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III–V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts. |
| 公开日期 | 2006-08-29 |
| 申请日期 | 2003-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/73706]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PIONEER CORPORATION |
| 推荐引用方式 GB/T 7714 | MIYACHI, MAMORU,WATANABE, ATSUSHI,TAKAHASHI, HIROKAZU,et al. Semiconductor laser device and method of manufacturing the same. US7098063. 2006-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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